esh1pb, esh1pc & esh1pd document number 88895 10-nov-05 vishay general semiconductor www.vishay.com 1 do-220aa (smp) new product high current density surface mount ultrafast rectifiers major ratings and characteristics i f(av) 1 a v rrm 100 v, 150 v, 200 v t rr 25 ns v f 0.90 v t j max. 175 c features very low profile - typical height of 1.0 mm ideal for automated placement glass passivated chip junction ultrafast recovery times for high frequency low forward voltage drop, low power loss low thermal resistance meets msl level 1 per j-std-020c solder dip 260 c, 40 seconds typical applications for use in secondary rectification and freewheeling for ultrafast switching speeds of ac-to-ac and dc-to-dc converters in high temperature conditions for both consumer and automotive applications mechanical data case: do-220aa (smp) epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise specified) parameter symbol esh1pb esh1pc esh1pd unit device marking code pb pc pd maximum repetitive peak reverse voltage v rrm 100 150 200 v maximum average forward rectified current (fig. 1) i f(av) 1.0 a peak forward surge current 10 ms single half sine- wave superimposed on rated load i fsm 50 a operating junction and storage temperature range t j , t stg - 55 to + 175 c
www.vishay.com 2 document number 88895 10-nov-05 esh1pb, esh1pc & esh1pd vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise specified) thermal characteristics (t a = 25 c unless otherwise specified) notes: (1) pulse test: 300 s pulse width, 1 % duty cycle (2) thermal resistance from junction to am bient and junction to lead mounted on p.c.b. with 5.0 x 5.0 mm copper pad areas. r jl is measured at the terminal of cathode band. r jc is measured at the top centre of the body ratings and characteristics curves (t a = 25 c unless otherwise specified) parameter test condition symbol value unit maximum instantaneous forward voltage (1) at i f = 0.7 a, t j = 25 c at i f = 1 a, t j = 25 c v f 0.86 0.90 v maximum reverse current at rated v r (1) voltage t j = 25 c t j = 125 c i r 1.0 25 a maximum reverse current at v r = 20 v, t j = 150 c i r 50 a maximum reverse recovery time at i f = 0.5 a, i r = 1 a, i rr = 0.25 a t rr 25 ns typical reverse recovery time at i f = 1.0 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % irm t j = 25 c at i f = 1.0 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % irm t j = 100 c t rr 25 35 ns typical reverse recovery time at i f = 1.0 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % irm t j = 25 c at i f = 1.0 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % irm t j = 100 c q rr 10 15 nc typical junction capacitance at 4.0 v, 1 mhz c j 25 pf parameter symbol esh1pb esh1pc esh1pd unit typical thermal resistance (2) r ja r jl r jc 105 15 20 c/w figure 1. forward current derating curve 0 1.2 95 105 115 125 135 145 155 165 a v erage for w ard rectified c u rrent (a) lead temperat u re (c) 0. 8 1.0 0.2 0.4 0.6 175 t l meas u red at the cathode b and terminal figure 2. maximum non-repetitive peak forward surge current peak for w ard s u rge c u rrent (a) nu m b er of cycles at 50 h z 1 10 100 10 20 30 0 40 50
esh1pb, esh1pc & esh1pd document number 88895 10-nov-05 vishay general semiconductor www.vishay.com 3 package dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical revers e leakage characteristics 0.4 0.6 0. 8 1.2 1.4 instantaneo u s for w ard v o ltage ( v ) 0.1 10 1 100 instantaneo u s for w ard c u rrent (a) 0.01 1.0 0.2 1.6 t j = 175 c t j = 25 c t j = 125 c t j = 150 c instantaneo u s re v erse c u rrent ( a) percent of rated peak re v erse v o ltage ( % ) 20 40 60 8 0 100 0.1 1 10 100 10 30 50 70 90 0.01 1000 t j = 25 c t j = 125 c t j = 150 c t j = 175 c figure 5. typical junction capacitance figure 6. typical trans ient thermal impedance re v erse v oltage ( v ) junction capacitance (pf) 0.1 1 10 100 1 100 10 1000 0.01 1 10 100 1 10 100 t, p u lse d u ration (sec.) transient thermal impedance ( c/ w ) 0.1 1000 0.000 (0.00) 0.012 (0.30) 0.013 (0.35) 0.004 (0.10) 0.01 8 (0.45) 0.006 (0.15) 0.045 (1.15) 0.033 (0. 8 5) 0.036 (0.91) 0.024 (0.61) 0.016 (0.40) 0.032 (0. 8 0) 0.053 (1.35) 0.041 (1.05) 0.012 (0.30) ref 0.105 (2.67) 0.025 (0.635) 0.100 (2.54) 0.030 (0.762) 0.050 (1.27) cathode b and 0.142 (3.61) 0.126 (3.19) 0.15 8 (4.00) 0.146 (3.70) 0.0 8 6 (2.1 8 ) 0.074 (1. 88 ) 0.0 8 7 (2.20) 0.103 (2.60) do-220aa (smp)
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